inchange semiconductor product specification silicon pnp power transistors 2n4918 2n4919 2N4920 description ? ? with to-126 package ? complement to type 2n4921/4922/4923 ? excellent safe operating area ? low collector saturation voltage applications ? for driver circuits ,switching ,and amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2n4918 -40 2n4919 -60 v cbo collector-base voltage 2N4920 open emitter -80 v 2n4918 -40 2n4919 -60 v ceo collector-emitter voltage 2N4920 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -1 a i cm collector current-peak -3 a i b base current -1 a p d total power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.16 ??/w
inchange semiconductor product specification 2 silicon pnp power transistors 2n4918 2n4919 2N4920 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n4918 -40 2n4919 -60 v ceo(sus) collector-emitter sustaining voltage 2N4920 i c =-0.1a; i b =0 -80 v v cesat collector-emitter saturation voltage i c =-1.0a ;i b =-0.1a -0.6 v v besat base-emitter saturation voltage i c =-1.0a ;i b =-0.1a -1.3 v v be base-emitter on voltage i c =-1a ; v ce =-1v -1.3 v 2n4918 v ce =-20v; i b =0 2n4919 v ce =-30v; i b =0 i ceo collector cut-off current 2N4920 v ce =-40v; i b =0 -0.5 ma i cbo collector cut-off current v cb = rated v cbo ;i e =0 -0.1 ma i cex collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =125 ?? -0.1 -0.5 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-50ma ; v ce =-1v 40 h fe-2 dc current gain i c =-500ma ; v ce =-1v 30 150 h fe-3 dc current gain i c =-1a ; v ce =-1v 10 f t transition frequency i c =-250ma ; v ce =-10v;f=1mhz 3.0 mhz c ob output capacitance f=100khz ; v cb =-10v;i e =0 100 pf
inchange semiconductor product specification 3 silicon pnp power transistors 2n4918 2n4919 2N4920 package outline fig.2 outline dimensions
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